Discrete Semiconductor Products

MIP75R12E2ATN-BP

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IGBT MODULES 1200V 75A, E2A

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Discrete Semiconductor Products

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IGBT MODULES 1200V 75A, E2A

Technical Specifications

Parameters and characteristics for this part

Specification	MIP75R12E2ATN-BP

Configuration	Three Phase Inverter
Current - Collector (Ic) (Max) [Max]	75 A
Current - Collector Cutoff (Max) [Max]	1 mA
Input	Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce	4.2 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	476 W
Supplier Device Package	E2A
Vce(on) (Max) @ Vge, Ic	2.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Input Capacitance (Cies) @ Vce	Current - Collector (Ic) (Max) [Max]	Configuration	Power - Max [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	NTC Thermistor
MCC (Micro Commercial Components) MIP75R12E2ATN-BP	E2A	2.15 V	4.2 nF	75 A	Three Phase Inverter	476 W	Chassis Mount	-40 °C	150 °C	Three Phase Bridge Rectifier	1200 V	Module	1 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Module Three Phase Inverter 1200 V 75 A 476 W Chassis Mount E2A

Technical documentation and resources