Specification	SSM3J358R,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	38.5 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	22.1 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM3J358R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0253 Ω@4.5V, SOT-23F

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature	Power Dissipation (Max)	FET Type	Technology	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case
Toshiba Semiconductor and Storage SSM3J358R,LF	6 A	22.1 mOhm	38.5 nC	SOT-23F	1 V	1.8 V	8 V	150 °C	1 W	P-Channel	MOSFET (Metal Oxide)	10 V	Surface Mount	20 V	SOT-23-3 Flat Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	18530	$ 0.41

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0253 Ω@4.5V, SOT-23F

Technical documentation and resources