Discrete Semiconductor Products
BSP122,115
NRNDNexperia USA Inc.
MOSFETS N-CHANNEL VERTICAL D-MOS LOGIC LEVEL FET
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Discrete Semiconductor Products
BSP122,115
NRNDNexperia USA Inc.
MOSFETS N-CHANNEL VERTICAL D-MOS LOGIC LEVEL FET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSP122,115 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 550 mA |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 2.4 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 1.5 W |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm |
| Supplier Device Package | SOT-223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSP122 Series
N-channel vertical D-MOS logic level FET
Documents
Technical documentation and resources