Discrete Semiconductor Products

AUIRLR2905ZTRL

NRND

MOSFET N-CH 55V 42A DPAK

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Discrete Semiconductor Products

NRND

MOSFET N-CH 55V 42A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRLR2905ZTRL

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	55 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	110 W
Qualification	AEC-Q101
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Grade	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Qualification	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON AUIRLR2905ZTRL	Surface Mount	175 °C	-55 °C	110 W	55 V	MOSFET (Metal Oxide)	N-Channel	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA (DPAK)	3 V	AEC-Q101	42 A	35 nC	1570 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 42A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources