Discrete Semiconductor Products

PBSS9110S,126

Obsolete

TRANS PNP 100V 1A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 100V 1A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS9110S,126

Current - Collector (Ic) (Max)	1 A
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	150
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package Name	TO-92-3
Power - Max	830 mW
Transistor Type	PNP
Vce Saturation (Max)	320 mV
Voltage - Collector Emitter Breakdown (Max)	100 V

Part	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Current - Collector (Ic) (Max)	Vce Saturation (Max)	Package Name	DC Current Gain (hFE) (Min)	Package / Case	Transistor Type	Mounting Type	Power - Max	Current - Collector Cutoff (Max)
NXP USA Inc. PBSS9110S,126	150 °C	100 V	100 MHz	1 A	320 mV	TO-92-3	150	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	PNP	Through Hole	830 mW	100 nA
NXP USA Inc. PBSS9110AS,126	150 °C	100 V	100 MHz	1 A	320 mV	TO-92-3	150	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	PNP	Through Hole	830 mW	100 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

Bipolar (BJT) Transistor PNP 100 V 1 A 100MHz 830 mW Through Hole TO-92-3

Technical documentation and resources