Discrete Semiconductor Products

IPI120P04P4L03AKSA1

Obsolete

MOSFET P-CH 40V 120A TO262-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 40V 120A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI120P04P4L03AKSA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	234 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	15000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	136 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

Part	Grade	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Input Capacitance (Ciss) (Max) @ Vds	FET Type
INFINEON IPI120P04P4L03AKSA1	Automotive	3.4 mOhm	4.5 V 10 V	I2PAK TO-262-3 Long Leads TO-262AA	120 A	40 V	2.2 V	MOSFET (Metal Oxide)	175 °C	-55 °C	16 V	Through Hole	136 W	234 nC	AEC-Q101	15000 pF	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

P-Channel 40 V 120A (Tc) 136W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources