Discrete Semiconductor Products

SIA444DJT-T1-GE3

Obsolete

MOSFET N-CH 30V 12A PPAK SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA444DJT-T1-GE3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	560 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max)	17 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

Part	Rds On (Max)	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Vgs(th) (Max)	Technology	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max)
Vishay Dale SIA444DJT-T4-GE3	17 mOhm	30 V	N-Channel	12 A	11 A	20 V	10 V	4.5 V	PowerPAK® SC-70-6	2.2 V	MOSFET (Metal Oxide)	PowerPAK® SC-70-6	-55 °C	150 °C	15 nC	3.5 W 19 W	Surface Mount	560 pF
Vishay Dale SIA444DJT-T1-GE3	17 mOhm	30 V	N-Channel	12 A		20 V	10 V	4.5 V	PowerPAK® SC-70-6	2.2 V	MOSFET (Metal Oxide)	PowerPAK® SC-70-6	-55 °C	150 °C	15 nC	3.5 W 19 W	Surface Mount	560 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources