2N6725

Obsolete

TRANS NPN DARL 50V 1A TO237

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Discrete Semiconductor Products

Obsolete

TRANS NPN DARL 50V 1A TO237

Technical Specifications

Parameters and characteristics for this part

Specification	2N6725

Current - Collector (Ic) (Max) [Max]	1 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	4000 hFE
Mounting Type	Through Hole
Package / Case	TO-237AA
Power - Max [Max]	1 W
Supplier Device Package	TO-237
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Mounting Type
ON Semiconductor 2N6725	50 V	1 A	TO-237	1.5 V	1 W	4000 hFE	TO-237AA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 50 V 1 A 1 W Through Hole TO-237

Technical documentation and resources

No documents available