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Integrated Circuits (ICs)

LMC6061AIMX/NOPB

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Texas Instruments

PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER

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SOIC (D)
Integrated Circuits (ICs)

LMC6061AIMX/NOPB

Active
Texas Instruments

PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationLMC6061AIMX/NOPB
Amplifier TypeGeneral Purpose
Current - Input Bias0.01 pA
Current - Supply24 µA
Gain Bandwidth Product100 kHz
Mounting TypeSurface Mount
Number of Circuits1
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Output TypeRail-to-Rail
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Slew Rate0.035 V/µs
Supplier Device Package8-SOIC
Voltage - Input Offset100 çV
Voltage - Supply Span (Max) [Max]15.5 V
Voltage - Supply Span (Min) [Min]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 356$ 0.84
Cut Tape (CT) 1$ 1.74
10$ 1.57
25$ 1.48
100$ 1.26
250$ 1.18
500$ 1.03
1000$ 0.86
Digi-Reel® 1$ 1.74
10$ 1.57
25$ 1.48
100$ 1.26
250$ 1.18
500$ 1.03
1000$ 0.86
Tape & Reel (TR) 2500$ 0.80
5000$ 0.77
12500$ 0.74
Texas InstrumentsLARGE T&R 1$ 1.31
100$ 1.08
250$ 0.78
1000$ 0.58

Description

General part information

LMC6061 Series

The LMC6061, LMC6062, and LMC6064 (LMC606x) are precision, low-offset-voltage, micropower operational amplifiers (op amps), capable of precision single-supply operation. Performance characteristics include ultra-low input bias current, high voltage gain, rail-to-rail output swing, and an input common-mode voltage range that includes ground. These features, plus the low power consumption of the op amps, make the LMC606x an excellent choice for battery-powered applications.

Other applications using the LMC606x include precision full-wave rectifiers, integrators, references, sample-and-hold circuits, and true instrumentation amplifiers.

This device is built with TI’s advanced double-poly silicon-gate CMOS process.