Discrete Semiconductor Products

EMF21T2R

NRND

TRANS NPN PREBIAS/PNP 0.15W EMT6

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Discrete Semiconductor Products

NRND

TRANS NPN PREBIAS/PNP 0.15W EMT6

Technical Specifications

Parameters and characteristics for this part

Specification	EMF21T2R

Current - Collector (Ic) (Max)	500 mA, 100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	30, 270
Frequency - Transition	250 MHz, 260 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	EMT6
Transistor Type	1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic [Max]	300 mV, 250 mV
Voltage - Collector Emitter Breakdown (Max)	12 V, 50 V

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Frequency - Transition	Mounting Type	Transistor Type	Package / Case	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max)	Vce Saturation (Max) @ Ib, Ic [Max]	Voltage - Collector Emitter Breakdown (Max)
Rohm Semiconductor EMF21T2R	500 nA	30 270	EMT6	250 MHz 260 MHz	Surface Mount	1 NPN Pre-Biased 1 PNP	SOT-563 SOT-666	10 kOhms	100 mA 500 mA	250 mV 300 mV	12 V 50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 260MHz 150mW Surface Mount EMT6

Technical documentation and resources