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TO-263-7, D2Pak
Discrete Semiconductor Products

IPB160N08S403ATMA1

Obsolete
INFINEON

MOSFET N-CH 80V 160A TO263-7

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TO-263-7, D2Pak
Discrete Semiconductor Products

IPB160N08S403ATMA1

Obsolete
INFINEON

MOSFET N-CH 80V 160A TO263-7

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB160N08S403ATMA1
Current - Continuous Drain (Id) @ 25°C160 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs112 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]7750 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max) [Max]208 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs3.2 mOhm
Supplier Device PackagePG-TO263-7-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPB160N Series

N-Channel 80 V 160A (Tc) 208W (Tc) Surface Mount PG-TO263-7-3

Documents

Technical documentation and resources