Discrete Semiconductor Products

MCP120N08Y-BP

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N-CHANNEL MOSFET,TO-220AB(H)

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Discrete Semiconductor Products

Active

N-CHANNEL MOSFET,TO-220AB(H)

Technical Specifications

Parameters and characteristics for this part

Specification	MCP120N08Y-BP

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	73 nC
Input Capacitance (Ciss) (Max) @ Vds	5666 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	190 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	TO-220AB (H)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Technology	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
MCC (Micro Commercial Components) MCP120N08Y-BP	TO-220-3	MOSFET (Metal Oxide)	N-Channel	TO-220AB (H)	4.8 mOhm	4 V	80 V	Through Hole	10 V	20 V	120 A	5666 pF	150 °C	-55 °C	190 W	73 nC
MCC (Micro Commercial Components) MCP120N08Y-BP	TO-220-3	MOSFET (Metal Oxide)	N-Channel	TO-220AB (H)	4.8 mOhm	4 V	80 V	Through Hole	10 V	20 V	120 A	5666 pF	150 °C	-55 °C	190 W	73 nC

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General part information

N-Channel 80 V 120A (Tc) 190W Through Hole TO-220AB (H)

Technical documentation and resources