Discrete Semiconductor Products
BUK7Y1R0-40NX
ActiveNexperia USA Inc.
N-CHANNEL 40 V, 0.97 MOHM, STANDARD LEVEL MOSFET IN LFPAK56
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Discrete Semiconductor Products
BUK7Y1R0-40NX
ActiveNexperia USA Inc.
N-CHANNEL 40 V, 0.97 MOHM, STANDARD LEVEL MOSFET IN LFPAK56
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK7Y1R0-40NX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 320 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 189 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 10622 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-100, SOT-669 |
| Power Dissipation (Max) | 268 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 0.97 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 958 | $ 3.20 | |
Description
General part information
BUK7Y1R0-40N Series
Automotive qualified N-channel MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, providing high ruggedness at low RDSon, housed in an LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
Documents
Technical documentation and resources