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MT53E128M32D2DS-053 AAT:A TR
Integrated Circuits (ICs)

MT53E128M32D2DS-053 AAT:A TR

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Micron Technology Inc.

IC DRAM 4GBIT 1.866GHZ 200WFBGA

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MT53E128M32D2DS-053 AAT:A TR
Integrated Circuits (ICs)

MT53E128M32D2DS-053 AAT:A TR

Active
Micron Technology Inc.

IC DRAM 4GBIT 1.866GHZ 200WFBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMT53E128M32D2DS-053 AAT:A TR
Clock Frequency1866 MHz
GradeAutomotive
Memory FormatDRAM
Memory Organization128 M
Memory Size512 kB
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]105 °C
Operating Temperature [Min]-40 °C
Package / Case200-WFBGA
QualificationAEC-Q100
Supplier Device Package200-WFBGA (10x14.5)
TechnologySDRAM - Mobile LPDDR4
Voltage - Supply1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 9.20
MouserN/A 2000$ 6.85

Description

General part information

MT53E Series

IC DRAM 4GBIT 1.866GHZ 200WFBGA

Documents

Technical documentation and resources

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