Specification	NTMFS002N10MCLT1G

Current - Continuous Drain (Id) @ 25°C	22 A, 175 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	97 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	189 W, 3 W
Rds On (Max) @ Id, Vgs [Max]	2.8 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NTMFS002N10MCL Series

MOSFET - Power, Single, N-Channel 100 V, 2.8 mΩ, 175A

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Supplier Device Package	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
ON Semiconductor NTMFS002N10MCLT1G	22 A 175 A	20 V	-55 °C	175 ░C	8-PowerTDFN 5 Leads	MOSFET (Metal Oxide)	3 V	5-DFN (5x6)	8-SOFL	Surface Mount	N-Channel	97 nC	2.8 mOhm	3 W 189 W	4.5 V 10 V	100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET - Power, Single, N-Channel 100 V, 2.8 mΩ, 175A

Technical documentation and resources