Discrete Semiconductor Products

PJE8412_R1_00001

NRND

30V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

NRND

30V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJE8412_R1_00001

Current - Continuous Drain (Id) @ 25°C	350 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.87 nC
Input Capacitance (Ciss) (Max) @ Vds	34 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-523
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.1 V

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJE8412_R1_00001	Surface Mount	150 °C	-55 °C	0.87 nC	300 mW	1.5 V 4.5 V	SOT-523	N-Channel	34 pF	10 V	MOSFET (Metal Oxide)	SOT-523	30 V	350 mA	1.1 V	1.2 Ohm

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General part information

N-Channel 30 V 350mA (Ta) 300mW (Ta) Surface Mount SOT-523

Technical documentation and resources