Discrete Semiconductor Products

PBSS301NX,115

LTB

TRANS NPN 12V 5.3A SOT89

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Discrete Semiconductor Products

LTB

TRANS NPN 12V 5.3A SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS301NX,115

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	140 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2.1 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

Part	Transistor Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Package / Case	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Operating Temperature	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)
Freescale Semiconductor - NXP PBSS301NZ,135	NPN	5.8 A	2 W	100 nA	140 MHz	TO-261-4 TO-261AA	235 mV	12 V	SOT-223	150 °C	Surface Mount	250
Freescale Semiconductor - NXP PBSS301NX,115	NPN		2.1 W	100 nA	140 MHz	TO-243AA	200 mV	12 V		150 °C	Surface Mount	250
Freescale Semiconductor - NXP PBSS301ND,115	NPN	4 A	1.1 W	100 nA	100 MHz	SC-74 SOT-457	420 mV		6-TSOP	150 °C	Surface Mount	250	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 12 V 5.3 A 140MHz 2.1 W Surface Mount SOT-89

Technical documentation and resources