Discrete Semiconductor Products

BCX56H6327XTSA1

LTB

TRANS NPN 80V 1A SOT89

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Discrete Semiconductor Products

LTB

TRANS NPN 80V 1A SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	BCX56H6327XTSA1

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	100 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Qualification	AEC-Q101
Supplier Device Package	PG-SOT89
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Mounting Type	Supplier Device Package	Operating Temperature	Frequency - Transition	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Grade	Qualification
INFINEON BCX56E6327HTSA1	100 nA	500 mV	80 V	NPN	40	TO-243AA	Surface Mount	PG-SOT89	150 °C	100 MHz	2 W	1 A
INFINEON BCX56H6327XTSA1	100 nA	500 mV	80 V	NPN	40	TO-243AA	Surface Mount	PG-SOT89	150 °C	100 MHz	2 W	1 A	Automotive	AEC-Q101
INFINEON BCX5616E6327HTSA1	100 nA	500 mV	80 V	NPN	100	TO-243AA	Surface Mount	PG-SOT89	150 °C	100 MHz	2 W	1 A
INFINEON BCX5616E6433HTMA1	100 nA	500 mV	80 V	NPN	100	TO-243AA	Surface Mount	PG-SOT89	150 °C	100 MHz	2 W	1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount PG-SOT89

Technical documentation and resources