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TO-263-7
Discrete Semiconductor Products

SQM40016EM_GE3

LTB
Vishay Dale

MOSFET N-CH 40V 250A TO263-7

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TO-263-7
Discrete Semiconductor Products

SQM40016EM_GE3

LTB
Vishay Dale

MOSFET N-CH 40V 250A TO263-7

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQM40016EM_GE3
Current - Continuous Drain (Id) (Tc)250 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)245 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)15000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads6 Leads
Package NameTO-263-7, D2PAK
Power Dissipation (Max)300 W
QualificationAEC-Q101
Rds On (Max)1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 2.971m+
Digi-Reel® 1$ 2.971m+
N/A 0$ 0.001m+
Tape & Reel (TR) 800$ 1.661m+
1600$ 1.41
2400$ 1.34
5600$ 1.29

CAD

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Description

General part information

SQM40016 Series

N-Channel 40 V 250A (Tc) 300W (Tc) Surface Mount TO-263-7

Documents

Technical documentation and resources