
FM24V10-GTR
ActiveFERROELECTRIC RAM (FRAM), 1 MBIT, 128K X 8BIT, I2C, 3.4 MHZ, 2 V TO 3.6 V SUPPLY, SOIC-8
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FM24V10-GTR
ActiveFERROELECTRIC RAM (FRAM), 1 MBIT, 128K X 8BIT, I2C, 3.4 MHZ, 2 V TO 3.6 V SUPPLY, SOIC-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | FM24V10-GTR |
|---|---|
| Access Time | 130 ns |
| Clock Frequency | 3.4 MHz |
| Memory Format | FRAM |
| Memory Interface | I2C |
| Memory Organization | 128 K |
| Memory Size | 1 Mbit |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Supplier Device Package | 8-SOIC |
| Technology | FRAM (Ferroelectric RAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 16.52 | |
| 1 | $ 16.52 | |||
| 10 | $ 15.30 | |||
| 10 | $ 15.30 | |||
| 25 | $ 15.09 | |||
| 25 | $ 15.09 | |||
| 50 | $ 14.90 | |||
| 50 | $ 14.90 | |||
| 100 | $ 13.06 | |||
| 100 | $ 13.06 | |||
| 250 | $ 12.50 | |||
| 250 | $ 12.50 | |||
| 500 | $ 12.42 | |||
| 500 | $ 12.42 | |||
| Digi-Reel® | 1 | $ 16.52 | ||
| 1 | $ 16.52 | |||
| 10 | $ 15.30 | |||
| 10 | $ 15.30 | |||
| 25 | $ 15.09 | |||
| 25 | $ 15.09 | |||
| 50 | $ 14.90 | |||
| 50 | $ 14.90 | |||
| 100 | $ 13.06 | |||
| 100 | $ 13.06 | |||
| 250 | $ 12.50 | |||
| 250 | $ 12.50 | |||
| 500 | $ 12.42 | |||
| 500 | $ 12.42 | |||
| N/A | 1574 | $ 15.71 | ||
| 1574 | $ 15.71 | |||
| Tape & Reel (TR) | 50 | $ 12.50 | ||
| 50 | $ 12.50 | |||
| 2500 | $ 11.49 | |||
| 2500 | $ 11.49 | |||
Description
General part information
FM24V10 Series
FM24V10-GTR is a 1Mbit (128K × 8) serial (I²C) F-RAM. It is a 1Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, the FM24V10 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling.
Documents
Technical documentation and resources