Discrete Semiconductor Products

NTB45N06LT4G

Obsolete

MOSFET N-CH 60V 45A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 45A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	NTB45N06LT4G

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W, 2.4 W
Rds On (Max) @ Id, Vgs [Max]	28 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Single N-Channel Power MOSFET 60V, 45A, 26mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
ON Semiconductor NTB45N06LT4G	32 nC	1700 pF	5 V	N-Channel	60 V	15 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	45 A	2.4 W 125 W	28 mOhm	2 V	D2PAK	-55 °C	175 ░C	Surface Mount
ON Semiconductor NTB45N06G		1725 pF	10 V	N-Channel	60 V	20 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	45 A	2.4 W 125 W		4 V	D2PAK	-55 °C	175 ░C	Surface Mount	46 nC	26 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

60 V, 45 A, 26 mΩ N-channel D2PAK Power MOSFET

Technical documentation and resources