PSMN013-100YSEX
ActivePOWER MOSFET, N CHANNEL, 100 V, 58 A, 0.011 OHM, SOT-669, SURFACE MOUNT
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PSMN013-100YSEX
ActivePOWER MOSFET, N CHANNEL, 100 V, 58 A, 0.011 OHM, SOT-669, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN013-100YSEX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 82 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 75 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3775 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-100, SOT-669 |
| Rds On (Max) @ Id, Vgs | 13 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
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Description
General part information
PSMN013-100YSE Series
Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on)characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail.
Documents
Technical documentation and resources