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onsemi-MUR860G Rectifiers Diode Switching 600V 8A 2-Pin(2+Tab) TO-220AC Rail
Discrete Semiconductor Products

RURP15100-F085P

Active
ON Semiconductor

1000V, 15A, 1.35V, TO-220 (2-LEAD)<BR>ULTRAFAST RECTIFIER/ TUBE ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-340BA-TO-220-2LD+1
onsemi-MUR860G Rectifiers Diode Switching 600V 8A 2-Pin(2+Tab) TO-220AC Rail
Discrete Semiconductor Products

RURP15100-F085P

Active
ON Semiconductor

1000V, 15A, 1.35V, TO-220 (2-LEAD)<BR>ULTRAFAST RECTIFIER/ TUBE ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-340BA-TO-220-2LD+1

Technical Specifications

Parameters and characteristics for this part

SpecificationRURP15100-F085P
Current - Average Rectified (Io)15 A
Current - Reverse Leakage @ Vr100 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseTO-220-2
Reverse Recovery Time (trr)450 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220-2
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If [Max]1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.97
10$ 1.27
100$ 0.86
800$ 0.70
NewarkEach 500$ 1.04
1000$ 0.93
2500$ 0.75
5000$ 0.73
ON SemiconductorN/A 1$ 0.74

Description

General part information

RURP15100_F085 Series

The RURP15100_F085 is an ultrafast diode with soft recovery characteristics (trr<200ns). It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive power supplies and other power switching automotive applications. Its low stored charge and ultrafast recovery with soft recovery characteristsics minimize ringing and electrical noice in many power switching circuits, thus reducing power loss in the witching transistor.