Discrete Semiconductor Products

SI2300-TP

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MOSFET N-CH 20V 4.5A SOT23

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 4.5A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	SI2300-TP

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	482 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	900 mV

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case
Micro Commercial Components SI2300-TP	4.5 A	2.5 V 4.5 V	20 V	SOT-23	Surface Mount	25 mOhm	1 W	10 V	482 pF	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	900 mV	SC-59 SOT-23-3 TO-236-3

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General part information

N-Channel 20 V 4.5A (Tj) 1W Surface Mount SOT-23

Technical documentation and resources