Specification	FDA032N08

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC
Input Capacitance (Ciss) (Max) @ Vds	15160 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs [Max]	3.2 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

FDA032N08 Series

N-Channel PowerTrench® MOSFET 75V, 235A, 3.2mΩ

Part	Technology	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor FDA032N08	MOSFET (Metal Oxide)	Through Hole	4.5 V	375 W	20 V	SC-65-3 TO-3P-3	220 nC	15160 pF	N-Channel	TO-3PN	10 V	120 A	-55 °C	175 ░C	3.2 mOhm	75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.35
		10	$ 3.57
		30	$ 3.30
		100	$ 2.56
		120	$ 2.95
		500	$ 2.12
		510	$ 2.55
		1000	$ 2.07
		1020	$ 2.20
Newark	Each	250	$ 2.27
		500	$ 2.21
ON Semiconductor	N/A	1	$ 2.21

Description

General part information

FDA032N08 Series

This N-Channel MOSFET is produced using PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.