Discrete Semiconductor Products

FF55MR12W1M1HB11BPSA1

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SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 15 A, 1.2 KV, 0.0529 OHM, MODULE

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Discrete Semiconductor Products

Active

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 15 A, 1.2 KV, 0.0529 OHM, MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	FF55MR12W1M1HB11BPSA1

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	52.9 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.15 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Power - Max [Max]	Vgs(th) (Max) @ Id
INFINEON FF55MR12W1M1HB70BPSA1	45 nC	Module	2 N-Channel	-40 °C	150 °C	1.2 kV	1200 V	15 A	52.9 mOhm	Silicon Carbide (SiC)	Chassis Mount	20 mW	5.15 V
INFINEON FF55MR12W1M1HB11BPSA1	45 nC	Module	2 N-Channel	-40 °C	175 °C	1.2 kV	1200 V	15 A	52.9 mOhm	Silicon Carbide (SiC)	Chassis Mount		5.15 V

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General part information

EasyDUAL™ 1BCoolSiC™ MOSFET half-bridge module 1200 V, 55 mΩ withPressFitcontact technology and and Al2O3 ceramic.

Technical documentation and resources