Discrete Semiconductor Products

301UR80

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DIODE GEN PURP 800V 330A DO205AB

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Discrete Semiconductor Products

Active

DIODE GEN PURP 800V 330A DO205AB

Technical Specifications

Parameters and characteristics for this part

Specification	301UR80

Current - Average Rectified (Io)	330 A
Current - Reverse Leakage @ Vr	15 mA
Mounting Type	Stud Mount
Operating Temperature - Junction [Max]	180 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-9, DO-205AB, Stud
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-205AB
Supplier Device Package	DO-9
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.22 V

Part	Speed [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology
Vishay General Semiconductor - Diodes Division 301UR80	200 mA 500 ns	15 mA	1.22 V	DO-205AB	DO-9	800 V	330 A	DO-205AB DO-9 Stud	180 °C	-40 °C	Stud Mount	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 800 V 330A Stud Mount DO-205AB (DO-9)

Technical documentation and resources

No documents available