Discrete Semiconductor Products

NTMFS6H848NT1G

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ON Semiconductor

POWER MOSFET, SINGLE N-CHANNEL, 80V, 64A, 9.4 MOHM

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Discrete Semiconductor Products

NTMFS6H848NT1G

Active

ON Semiconductor

POWER MOSFET, SINGLE N-CHANNEL, 80V, 64A, 9.4 MOHM

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFS6H848NT1G

Current - Continuous Drain (Id) @ 25°C	13 A, 57 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	73 W, 3.7 W
Rds On (Max) @ Id, Vgs	9.4 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTMFS6H801NL Series

MOSFET - Power, Single N-Channel, 80 V, 2.7 mΩ, 160 A - NTMFS6H801NL

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	FET Type	Package / Case	Power Dissipation (Max)	Supplier Device Package	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NTMFS6H864NLT1G	-55 °C	175 ░C	20 V	9 nC	29 mOhm	431 pF	2 V	MOSFET (Metal Oxide)	N-Channel	8-PowerTDFN 5 Leads	3.5 W 33 W	5-DFN (5x6)	8-SOFL	80 V	Surface Mount	4.5 V 10 V
ON Semiconductor NTMFS6H836NT1G	-55 °C	175 ░C	20 V	25 nC	6.7 mOhm	1640 pF	4 V	MOSFET (Metal Oxide)	N-Channel	8-PowerTDFN 5 Leads	3.7 W 89 W	5-DFN (5x6)	8-SOFL	80 V	Surface Mount	6 V 10 V	15 A 74 A
ON Semiconductor NTMFS6H848NT1G	-55 °C	175 ░C	20 V	16 nC	9.4 mOhm		4 V	MOSFET (Metal Oxide)	N-Channel	8-PowerTDFN 5 Leads	3.7 W 73 W	5-DFN (5x6)	8-SOFL	80 V	Surface Mount	6 V 10 V	13 A 57 A	1180 pF
ON Semiconductor NTMFS6H801NT1G	-55 °C	175 ░C	20 V	64 nC		4120 pF	4 V	MOSFET (Metal Oxide)	N-Channel	8-PowerTDFN 5 Leads	3.8 W 166 W	5-DFN (5x6)	8-SOFL	80 V	Surface Mount	6 V 10 V	23 A 157 A		2.8 mOhm
ON Semiconductor NTMFS6D1N08HT1G	-55 °C	175 ░C	20 V			2085 pF	4 V	MOSFET (Metal Oxide)	N-Channel	8-PowerTDFN 5 Leads	3.8 W 104 W	5-DFN (5x6)	8-SOFL	80 V	Surface Mount	6 V 10 V	17 A 89 A		5.5 mOhm	32 nC
ON Semiconductor NTMFS6H801NLT1G	-55 °C	175 ░C	20 V	90 nC	2.7 mOhm	5126 pF	2 V	MOSFET (Metal Oxide)	N-Channel	8-PowerTDFN 5 Leads	3.8 W 167 W	5-DFN (5x6)	8-SOFL	80 V	Surface Mount	4.5 V 10 V	24 A 160 A
ON Semiconductor NTMFS6H800NLT1G	-55 °C	175 ░C	20 V	112 nC	1.9 mOhm		2 V	MOSFET (Metal Oxide)	N-Channel	8-PowerTDFN 5 Leads	3.9 W 214 W	5-DFN (5x6)	8-SOFL	80 V	Surface Mount	4.5 V 10 V	30 A 224 A
ON Semiconductor NTMFS6B03NT1G	-55 °C	150 °C	20 V	58 nC	4.8 mOhm	4200 pF	4 V	MOSFET (Metal Oxide)	N-Channel	8-PowerTDFN 5 Leads	3.4 W 165 W	5-DFN (5x6)	8-SOFL	100 V	Surface Mount	6 V 10 V	19 A 132 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.62
		10	$ 1.03
		100	$ 0.69
		500	$ 0.54
	Digi-Reel®	1	$ 1.62
		10	$ 1.03
		100	$ 0.69
		500	$ 0.54
	Tape & Reel (TR)	1500	$ 0.47
		3000	$ 0.43
		4500	$ 0.42
		7500	$ 0.41
Newark	Each	1000	$ 0.54
		2500	$ 0.43
		10000	$ 0.42
ON Semiconductor	N/A	1	$ 0.37

Description

General part information

NTMFS6H801NL Series

Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.

NTMFS6H848NT1G

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NTMFS6H848NT1G

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Technical Specifications

NTMFS6H801NL Series

Pricing

Description

NTMFS6H801NL Series

Documents

Datasheet

Datasheet

Package Drawing-488AA-DFN5 5X6, 1.27P (SO 8FL)

NTMFS6H801NL Series