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INFINEON IPP100N12S305AKSA1
Discrete Semiconductor Products

IPP114N12N3GXKSA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; TO-220 PACKAGE; 11.4 MOHM;

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INFINEON IPP100N12S305AKSA1
Discrete Semiconductor Products

IPP114N12N3GXKSA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 120 V ; TO-220 PACKAGE; 11.4 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP114N12N3GXKSA1
Current - Continuous Drain (Id) @ 25°C75 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]65 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4310 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)136 W
Rds On (Max) @ Id, Vgs11.4 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 334$ 2.66
Tube 1$ 2.68
10$ 1.73
100$ 1.19
500$ 0.96
1000$ 0.89
2000$ 0.82
5000$ 0.81
NewarkEach 1$ 3.20
10$ 2.92
100$ 2.43
500$ 2.08
1000$ 1.80
2500$ 1.71
5000$ 1.65

Description

General part information

IPP114 Series

The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.

Documents

Technical documentation and resources