Discrete Semiconductor Products

IPD048N06L3GATMA1

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MOSFET N-CH 60V 90A TO252-3

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Discrete Semiconductor Products

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MOSFET N-CH 60V 90A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD048N06L3GATMA1

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	115 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	PG-TO252-3-311
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Technology
INFINEON IPD048N06L3GATMA1	20 V	175 °C	-55 °C	115 W	90 A	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3-311	2.2 V	60 V	N-Channel	50 nC	4.8 mOhm	8400 pF	Surface Mount	MOSFET (Metal Oxide)

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General part information

MOSFET N-CH 60V 90A TO252-3

Technical documentation and resources