Specification	1SS367,H3F

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	SOD-323, SC-76
Speed	200 mA
Speed	Any Speed
Supplier Device Package	USC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	10 V
Voltage - Forward (Vf) (Max) @ If [Max]	500 mV

1SS367 Series

Diodes, 10 V/0.1 A Schottky Barrier Diode, SOD-323(USC)

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Package / Case	Speed	Speed	Technology
Toshiba Semiconductor and Storage 1SS367,H3F	20 µA	10 V	USC	500 mV	100 mA	Surface Mount	125 °C	40 pF	SC-76 SOD-323	200 mA	Any Speed	Schottky

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	23671	$ 0.15

General part information

Diodes, 10 V/0.1 A Schottky Barrier Diode, SOD-323(USC)

Technical documentation and resources