Discrete Semiconductor Products

IPB79CN10N G

Obsolete

MOSFET N-CH 100V 13A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 13A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB79CN10N G

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	716 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	79 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON IPB79CN10N G	MOSFET (Metal Oxide)	4 V	10 V	11 nC	716 pF	31 W	79 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 V	Surface Mount	20 V	N-Channel	13 A	175 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.51

General part information

N-Channel 100 V 13A (Tc) 31W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources