Infineon Technologies AG-CY7C1069G-10ZSXI SRAM Chip SRAM Chip Async Single 5V 16M-bit 2M x 8 10ns 54-Pin TSOP-II Tray

Integrated Circuits (ICs)

CY7C10612G30-10ZSXI

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INFINEON

SRAM CHIP ASYNC SINGLE 3.3V 16M-BIT 1M X 16 10NS 54-PIN TSOP-II TRAY

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DocumentsDatasheet Technical Data Sheet EN

Integrated Circuits (ICs)

CY7C10612G30-10ZSXI

Active

INFINEON

SRAM CHIP ASYNC SINGLE 3.3V 16M-BIT 1M X 16 10NS 54-PIN TSOP-II TRAY

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DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CY7C10612G30-10ZSXI

Access Time	10 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	1 M
Memory Size	2 MB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Supplier Device Package	54-TSOP II
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	3 V
Write Cycle Time - Word, Page	10 ns

CY7C10612 Series

Part	Write Cycle Time - Word, Page	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Size	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Memory Format	Memory Type	Memory Interface	Mounting Type	Access Time	Memory Organization	Technology
INFINEON CY7C10612GE30-10ZSXIT	10 ns	3.6 V	3 V	2 MB	85 C	-40 ¯C	54-TSOP II	SRAM	Volatile	Parallel	Surface Mount	10 ns	1 M	SRAM - Asynchronous
INFINEON CY7C10612GE30-10ZSXI	10 ns	3.6 V	3 V	2 MB	85 C	-40 ¯C	54-TSOP II	SRAM	Volatile	Parallel	Surface Mount	10 ns	1 M	SRAM - Asynchronous
INFINEON CY7C10612G30-10ZSXI	10 ns	3.6 V	3 V	2 MB	85 C	-40 ¯C	54-TSOP II	SRAM	Volatile	Parallel	Surface Mount	10 ns	1 M	SRAM - Asynchronous
INFINEON CY7C10612DV33-10ZSXI	10 ns	3.6 V	3 V	2 MB	85 C	-40 ¯C	54-TSOP II	SRAM	Volatile	Parallel	Surface Mount	10 ns	1 M	SRAM - Asynchronous
INFINEON CY7C10612DV33-10ZSXI	10 ns	3.6 V	3 V	2 MB	85 C	-40 ¯C	54-TSOP II	SRAM	Volatile	Parallel	Surface Mount	10 ns	1 M	SRAM - Asynchronous

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 21.10
		5	$ 20.50
		10	$ 19.50
		50	$ 18.20
		100	$ 15.80
Digikey	N/A	76	$ 21.31
	Tray	1	$ 20.64
		10	$ 19.23
		25	$ 19.02
		40	$ 18.55
		108	$ 16.28
		324	$ 15.73
		540	$ 15.31
Newark	Each	1	$ 21.96
		5	$ 20.83
		10	$ 19.69
		25	$ 18.34
		50	$ 18.32
		100	$ 16.28
		432	$ 16.00

Description

General part information

CY7C10612 Series

CY7C10612G30-10ZSXI is a high performance CMOS fast static RAM device with embedded ECC. The device includes an error indication pin that signals an error detection and correction event during a read cycle. To write to the device, take chip enables (active-low CE) and write enable (active-low WE) input LOW. To read from the device, take chip enable (active-low CE) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), the active-low BHE and active-low BLE are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW).