Discrete Semiconductor Products

IRF40SC240ARMA1

LTB

INFINEON

STRONGIRFET™ N-CHANNEL ; D2PAK 7PIN TO-263 7PIN PACKAGE; 0.65 MOHM;

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Discrete Semiconductor Products

IRF40SC240ARMA1

LTB

INFINEON

STRONGIRFET™ N-CHANNEL ; D2PAK 7PIN TO-263 7PIN PACKAGE; 0.65 MOHM;

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF40SC240ARMA1

Current - Continuous Drain (Id) @ 25°C	360 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	458 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	18000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)	417 W, 2.4 W
Rds On (Max) @ Id, Vgs	0.65 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

IRF40SC240 Series

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C
INFINEON IRF40SC240ARMA1	3.7 V	2.4 W 417 W	20 V	175 °C	-55 °C	458 nC	Surface Mount	18000 pF	PG-TO263-7	D2PAK (6 Leads + Tab) TO-263-7	0.65 mOhm	6 V 10 V	40 V	N-Channel	MOSFET (Metal Oxide)	360 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.83
		10	$ 3.20
		100	$ 2.28
	Digi-Reel®	1	$ 4.83
		10	$ 3.20
		100	$ 2.28
	N/A	0	$ 4.78
	Tape & Reel (TR)	800	$ 1.80

Description

General part information

IRF40SC240 Series

Infineon’s latest 40 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on)making them the ideal solution for high current battery powered applications.

Documents

Technical documentation and resources

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