Specification	PXN012-60QLJ

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18.77 nC
Input Capacitance (Ciss) (Max) @ Vds	957 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	34.7 W
Rds On (Max) @ Id, Vgs	11.5 mOhm
Supplier Device Package	MLPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

PXN012-60QL Series

N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33

Part	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PXN012-60QLJ	34.7 W	Surface Mount	2.5 V	957 pF	42 A	20 V	18.77 nC	MOSFET (Metal Oxide)	11.5 mOhm	MLPAK33	60 V	N-Channel	150 °C	-55 °C	8-PowerVDFN	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.42

General part information

General purpose, 42 A rated, logic level N-channel enhancement mode Power MOSFET in MLPAK33 package.

Technical documentation and resources