Discrete Semiconductor Products

SI7224DN-T1-E3

Obsolete

MOSFET 2N-CH 30V 6A PPAK 1212

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 6A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7224DN-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Input Capacitance (Ciss) (Max) @ Vds	570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max	23 W, 17.8 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	FET Feature	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power - Max
Vishay General Semiconductor - Diodes Division SI7224DN-T1-E3	MOSFET (Metal Oxide)	Surface Mount	PowerPAK® 1212-8 Dual	-55 °C	150 °C	35 mOhm	14.5 nC	2.2 V	Logic Level Gate	PowerPAK® 1212-8 Dual	570 pF	2 N-Channel (Dual)	30 V	6 A	17.8 W 23 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 6A 17.8W, 23W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources