Specification	SSM3J356R,LXHF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	330 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2 V

SSM3J356R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -60 V, -2.0 A, 0.3 Ω@10V, SOT-23F

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Technology	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs	Grade	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Qualification	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Toshiba Semiconductor and Storage SSM3J356R,LXHF	2 V	330 pF	1 W	2 A	150 °C	MOSFET (Metal Oxide)	Surface Mount	P-Channel	300 mOhm	Automotive	60 V	10 V	-20 V	8.3 nC	SOT-23F	SOT-23-3 Flat Leads	AEC-Q101	4 V	10 V
Toshiba Semiconductor and Storage SSM3J356R,LF	2 V	330 pF	1 W	2 A	150 °C	MOSFET (Metal Oxide)	Surface Mount	P-Channel	300 mOhm		60 V	10 V	-20 V	8.3 nC	SOT-23F	SOT-23-3 Flat Leads		4 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -60 V, -2.0 A, 0.3 Ω@10V, SOT-23F

Technical documentation and resources