Discrete Semiconductor Products

IDL02G65C5XUMA1

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DIODE SIL CARBIDE 650V 2A VSON-4

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Discrete Semiconductor Products

Unknown

DIODE SIL CARBIDE 650V 2A VSON-4

Technical Specifications

Parameters and characteristics for this part

Specification	IDL02G65C5XUMA1

Capacitance @ Vr, F	70 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	35 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	4-PowerTSFN
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-VSON-4
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Capacitance @ Vr, F	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Package / Case	Technology
INFINEON IDL02G65C5XUMA2	2 A	1.7 V	650 V	Surface Mount	70 pF	500 mA	PG-VSON-4	175 ░C	-55 °C	0 ns	35 µA	4-PowerTSFN	SiC (Silicon Carbide) Schottky
INFINEON IDL02G65C5XUMA1	2 A	1.7 V	650 V	Surface Mount	70 pF	500 mA	PG-VSON-4	175 ░C	-55 °C	0 ns	35 µA	4-PowerTSFN	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 2A Surface Mount PG-VSON-4

Technical documentation and resources