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SOT669
Discrete Semiconductor Products

BUK7Y25-60EX

Active
Nexperia USA Inc.

MOSFETS N-CHANNEL 80 V, 25 MOHM STANDARD LEVEL MOSFET IN LFPAK56

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Search across all available documentation for this part.

Documentsplastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm bodyQuestions about package outline drawings+18
SOT669
Discrete Semiconductor Products

BUK7Y25-60EX

Active
Nexperia USA Inc.

MOSFETS N-CHANNEL 80 V, 25 MOHM STANDARD LEVEL MOSFET IN LFPAK56

Deep-Dive with AI

Documentsplastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm bodyQuestions about package outline drawings+18

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK7Y25-60EX
Current - Continuous Drain (Id) @ 25°C34 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16.1 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1043 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max) [Max]64 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 368$ 1.22
MouserN/A 1$ 0.66
10$ 0.51
100$ 0.38
500$ 0.31
1500$ 0.28
3000$ 0.24
9000$ 0.24

Description

General part information

BUK7Y25-60E Series

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.