Discrete Semiconductor Products

IPI120N10S403AKSA1

Obsolete

MOSFET N-CH 100V 120A TO262-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 120A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI120N10S403AKSA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	10120 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	250 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Package / Case	Vgs(th) (Max) @ Id	FET Type	Grade	Power Dissipation (Max)	Vgs (Max)
INFINEON IPI120N10S403AKSA1	175 °C	-55 °C	10120 pF	AEC-Q101	120 A	140 nC	10 V	3.9 mOhm	100 V	Through Hole	MOSFET (Metal Oxide)	I2PAK TO-262-3 Long Leads TO-262AA	3.5 V	N-Channel	Automotive	250 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 120A (Tc) 250W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources