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PBSS305NX,115
Discrete Semiconductor Products

PBSS305NX,115

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Nexperia USA Inc.

80 V, 4.6 A NPN LOW VCESAT TRANSISTOR

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PBSS305NX,115
Discrete Semiconductor Products

PBSS305NX,115

Active
Nexperia USA Inc.

80 V, 4.6 A NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS305NX,115
Current - Collector (Ic) (Max) [Max]4.6 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]180 hFE
Frequency - Transition110 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]2.1 W
QualificationAEC-Q100
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic240 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1000$ 1.22

Description

General part information

PBSS305NX Series

NPN low VCEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.