Discrete Semiconductor Products

SICPT30120-BP

Obsolete

DIODE SIL CARB 1200V 30A TO247AD

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1200V 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SICPT30120-BP

Capacitance @ Vr, F	2259 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247AD
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Speed	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type
MCC (Micro Commercial Components) SICPT30120-BP	SiC (Silicon Carbide) Schottky	60 µA	175 ░C	-55 °C	1.7 V	TO-247-2	500 mA	0 ns	2259 pF	1.2 kV	TO-247AD	30 A	Through Hole
MCC (Micro Commercial Components) SICPT30120-BP	SiC (Silicon Carbide) Schottky	60 µA	175 ░C	-55 °C	1.7 V	TO-247-2	500 mA	0 ns	2259 pF	1.2 kV	TO-247AD	30 A	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 30A Through Hole TO-247AD

Technical documentation and resources