Discrete Semiconductor Products

MJE13003

Obsolete

ON Semiconductor

1.5 A, 400 V NPN BIPOLAR POWER TRANSISTOR

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Search across all available documentation for this part.

DocumentsPackage Drawing-77-09-TO-225 Datasheet +1

Discrete Semiconductor Products

MJE13003

Obsolete

ON Semiconductor

1.5 A, 400 V NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

DocumentsPackage Drawing-77-09-TO-225 Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MJE13003

Current - Collector (Ic) (Max) [Max]	1.5 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	8
Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.4 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	400 V

MJE13003 Series

1.5 A, 400 V NPN Bipolar Power Transistor

Part	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Mounting Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Frequency - Transition	Power - Max [Max]
ON Semiconductor MJE13003	150 °C	-65 °C	NPN	Through Hole	TO-126-3 TO-225AA	3 V	1.5 A	8	400 V	TO-126	10 MHz	1.4 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJE13003 Series

These Power 2 A, 400 V NPN Bipolar Power Transistor is designed for high voltage power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.