Discrete Semiconductor Products

FQAF22P10

Obsolete

MOSFET P-CH 100V 16.6A TO3PF

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 100V 16.6A TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	FQAF22P10

Current - Continuous Drain (Id) @ 25°C	16.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)
ON Semiconductor FQAF22P10	P-Channel	70 W	-55 °C	175 ░C	10 V	Through Hole	16.6 A	125 mOhm	50 nC	1500 pF	4 V	MOSFET (Metal Oxide)	30 V	TO-3P-3 Full Pack	TO-3PF	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 100 V 16.6A (Tc) 70W (Tc) Through Hole TO-3PF

Technical documentation and resources