Discrete Semiconductor Products

IPB093N04LGATMA1

Obsolete

MOSFET N-CH 40V 50A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 50A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IPB093N04LGATMA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	47 W
Rds On (Max) @ Id, Vgs	9.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id
INFINEON IPB093N04LGATMA1	4.5 V 10 V	9.3 mOhm	40 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C	50 A	47 W	Surface Mount	2100 pF	20 V	28 nC	MOSFET (Metal Oxide)	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 40 V 50A (Tc) 47W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources