Discrete Semiconductor Products

2SB1188-R-TP

LTB

TRANS PNP 32V 2A SOT-89

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Discrete Semiconductor Products

LTB

TRANS PNP 32V 2A SOT-89

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1188-R-TP

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	82 hFE
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power - Max [Max]	500 mW
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	32 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic
MCC (Micro Commercial Components) 2SB1188-R-TP	150 °C	-55 °C	TO-243AA	1 µA	32 V	500 mW	2 A	PNP	82 hFE	Surface Mount	800 mV
MCC (Micro Commercial Components) 2SB1188-Q-TP	150 °C	-55 °C	TO-243AA	1 µA	32 V	500 mW	2 A	PNP	82 hFE	Surface Mount	800 mV
MCC (Micro Commercial Components) 2SB1188-Q-TP	150 °C	-55 °C	TO-243AA	1 µA	32 V	500 mW	2 A	PNP	82 hFE	Surface Mount	800 mV
MCC (Micro Commercial Components) 2SB1188-R-TP	150 °C	-55 °C	TO-243AA	1 µA	32 V	500 mW	2 A	PNP	82 hFE	Surface Mount	800 mV

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General part information

Bipolar (BJT) Transistor PNP 32 V 2 A 80MHz 500 mW Surface Mount SOT-89

Technical documentation and resources