Discrete Semiconductor Products

2N6515 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT 250VCBO 250VCEO 6.0VEBO 5.0V 625MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT 250VCBO 250VCEO 6.0VEBO 5.0V 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N6515 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	250 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	Power - Max [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
Central Semiconductor Corp 2N6515 TIN/LEAD	50	200 MHz	1 V	250 V	Through Hole	150 °C	-65 °C	TO-226AA	TO-226-3 TO-92-3	625 mW	NPN	500 mA	50 nA	TO-92-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.16
Mouser	N/A	5000	$ 0.15
		10000	$ 0.14

General part information

BIPOLAR TRANSISTORS - BJT 250VCBO 250VCEO 6.0VEBO 5.0V 625MW

Technical documentation and resources