Discrete Semiconductor Products

MCU80N03-TP

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MOSFET N-CH 30V 80A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 80A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU80N03-TP

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Mounting Type	Power Dissipation (Max) [Max]
MCC (Micro Commercial Components) MCU80N03A-TP	2.5 V	N-Channel	52.8 nC	30 V	2150 pF	4.5 V 10 V	45 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	5.5 mOhm	MOSFET (Metal Oxide)	175 °C	-55 °C	20 V	Surface Mount
MCC (Micro Commercial Components) MCU80N03A-TP	2.5 V	N-Channel	52.8 nC	30 V	2150 pF	4.5 V 10 V	45 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	5.5 mOhm	MOSFET (Metal Oxide)	175 °C	-55 °C	20 V	Surface Mount
MCC (Micro Commercial Components) MCU80N03-TP	2.5 V	N-Channel	28 nC	30 V	1600 pF	4.5 V 10 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	4 mOhm	MOSFET (Metal Oxide)	175 °C	-55 °C	20 V	Surface Mount	70 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 80A (Tc) 70W (Tc) Surface Mount DPAK

Technical documentation and resources