Discrete Semiconductor Products

SI8473EDB-T1-E1

Obsolete

MOSFET P-CH 20V 4MICROFOOT

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8473EDB-T1-E1

Current - Continuous Drain (Id) (Ta)	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	2.7 W, 1.1 W
Rds On (Max)	41 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

Part	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Mounting Type	Package Name	Technology	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI8473EDB-T1-E1	41 mOhm	4.5 A	1.5 V	20 V	4-XFBGA CSPBGA	P-Channel	2.5 V	4.5 V	1.1 W 2.7 W	Surface Mount	4-Microfoot	MOSFET (Metal Oxide)	12 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 4.5A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources