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STMICROELECTRONICS STPSC5H12D
Discrete Semiconductor Products

IDH06SG60CXKSA2

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INFINEON

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 6 A, 8 NC, TO-220

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STMICROELECTRONICS STPSC5H12D
Discrete Semiconductor Products

IDH06SG60CXKSA2

Active
INFINEON

SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 6 A, 8 NC, TO-220

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIDH06SG60CXKSA2
Capacitance @ Vr, F130 pF
Current - Average Rectified (Io)6 A
Current - Reverse Leakage @ Vr50 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackagePG-TO220-2-1
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 495$ 3.89
MouserN/A 1$ 3.93
10$ 3.14
25$ 2.09
100$ 1.91
500$ 1.45
1000$ 1.39
NewarkEach 1$ 4.14
10$ 3.64
25$ 2.18
50$ 2.12
100$ 2.06
250$ 2.02
500$ 1.77

Description

General part information

XDH06SG60 Series

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.

Documents

Technical documentation and resources